范文一:ULN2003APGAN 达林顿陈列接口驱动器
ULN2003 是高耐压、大电流复合晶体管阵列,由七个硅 NPN 复合晶体管组成
ULN2003内部还集成了一个消线圈反电动势的二极管, 可用来驱动继电器。 它是双列 16脚 封装 ,NPN 晶体管矩阵 , 最大驱动电压 =50V,电流 =500mA,输入电压 =5V,适用于 TTL COMS,由达林顿管组成驱动电路。 ULN 是集成达林顿管 IC, 内部还集成了一个消线圈反电动势的 二极管 , 它的输出端允许通过电流为 200mA ,饱和压降 VCE 约 1V 左右,耐压 BVCEO 约为 36V 。用户输出口的外接负载可根据以上参数估算。采用集电极开路输出,输出电流大,故 可直接驱动继电器或固体继电器,也可直接驱动低压灯泡。通常单片机驱动 ULN2003时, 上拉 2K 的电阻较为合适,同时, COM 引脚应该悬空或接电源。
ULN2003是一个非门电路,包含 7个单元,单独每个单元驱动电流最大可达 350mA , 9脚 可以悬空。
比如 1脚输入, 16脚输出,你的负载接在 VCC 与 16脚之间,不用 9脚。
特点如下:
ULN2003 的每一对达林顿都串联一个 2.7K 的基极电阻 , 在 5V 的工作电压下它能与 TTL 和 CMOS 电路直接相连,可以直接处理原先需要标准逻辑缓冲器来处理的数据。 ULN2003 工作电压高,工作电流大,灌电流可达 500mA ,并且能够在关态时承受 50V 的电压,输出还可以在高负载电流并行运行。
ULN2003 采用 DIP — 16 或 SOP — 16 塑料封装。
ULN2003芯片引脚介绍
引脚 1:CPU 脉冲输入端,端口对应一个信号输出端。
引脚 2:CPU 脉冲输入端。
引脚 3:CPU 脉冲输入端。
引脚 4:CPU 脉冲输入端。
引脚 5:CPU 脉冲输入端。
引脚 6:CPU 脉冲输入端。
引脚 7:CPU 脉冲输入端。
引脚 8:接地。
引脚 9:该脚是内部 7个续流二极管负极的公共端, 各二极管的正极分别接各达林顿管的集 电极。用于感性负载时,该脚接负载电源正极,实现续流作用。如果该脚接地 , 实际上就是 达林顿管的集电极对地接通。
引脚 10:脉冲信号输出端,对应 7脚信号输入端 .
引脚 11:脉冲信号输出端,对应 6脚信号输入端。
引脚 12:脉冲信号输出端,对应 5脚信号输入端。
引脚 13:脉冲信号输出端,对应 4脚信号输入端。
引脚 14:脉冲信号输出端,对应 3脚信号输入端。
引脚 15:脉冲信号输出端,对应 2脚信号输入端。
引脚 16
:脉冲信号输出端,对应 1脚信号输入端。
范文二:大电流达林顿驱动器
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
TD62064APG, TD62064AFG
4ch High-Current Darlington Sink Driver
The TD62064APG/AFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs.
All units feature integral clamp diodes for switching inductive loads.
Applications include relay, hammer, lamp and stepping motor drivers.
TD62064APG
Features
? Output current (single output) 1.5 A (max) ? High sustaining voltage output 50 V (min) ?
Output clamp diodes
?
Input compatible with TTL and 5 V CMOS ?
GND terminal = Heat sink ? Package type-APG: DIP-16 pin ? Package type-AFG: HSOP-16 pin
TD62064AFG
Pin Assignment (top view)
TD62064APG
Heat sink Weight
DIP16-P-300-2.54A: 1.11 g (typ.) HSOP16-P-300-1.00: 0.50 g (typ.)
& GND
TD62064AFG
Heat sink & GND
Schematics (each driver)
COMMON
Input
Output
GND
Note: The input and output parasitic diodes cannot be used as clamp diodes.
Precautions for Using
(1) This IC does not include built-in protection circuits for excess current or overvoltage.
If this IC is subjected to excess current or overvoltage, it may be destroyed.
Hence, the utmost care must be taken when systems which incorporate this IC are designed.
Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding.
(2) This IC is being used to drive an inductive load (such as a motor, solenoid or relay), Toshiba recommends that
the diodes (pins 1 and 8) be connected to the secondary power supply pin so as to absorb the counter electromotive force generated by the load. Please adhere to the device’s absolute maximum ratings.
Toshiba recommends that zener diodes be connected between the diodes (pins 1 and 8) and the secondary power supply pin (as the anode) so as to enable rapid absorption of the counter electromotive force. Again, please adhere to the device’s absolute maximum ratings.
Absolute Maximum Ratings (Ta = 25°C)
Output sustaining voltage Output current Input current Input voltage
Clamp diode reverse voltage Clamp diode forward current
Power dissipation Operating temperature Storage temperature
APG AFG
V CE (SUS)
I OUT I IN V IN V R I F P D T opr T stg
?0.5 to 50
V
?0.5 to 17
V
1.47/2.7 (Note 1)0.9/1.4 (Note 2)?40 to 85 ?55 to 150
W °C °C
Note 1: On glass epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On glass epoxy PCB (60 × 30 × 1.6 mm Cu 30%)
Operating Conditions (Ta = ?40 to 85°C)
Max Output sustaining voltage
V CE (SUS)
Unit
?? ?? ? ? ?
1250390907172
mA/ch
= 25°C 0 t pw = 25 ms 4 circuits T j = 120°C Ta = 85°C
V IN V IN (ON) V IN (OFF)
I IN V R I F
I OUT = 1.25 A
Duty = 10% Duty = 50% Duty = 10% Duty = 50%
0 0 0 0
Output current
I OUT
Input voltage
Output ON Output OFF
Input current
Clamp diode reverse voltage Clamp diode forward current Power dissipation
?? 8
2.5
?
8
V
?? 0.4 ?? ?? ?
? ? ?
? ??mA V A W
= 85°C (Note 1)
P D
AFG Ta = 85°C (Note 2)
Note 1: On glass epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On glass epoxy PCB (60 × 30 × 1.6 mm Cu 30%)
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Output leakage current
I CEX
1
Test Condition
Max ? ? ? ?
Unit
V CE = 50 V, Ta = 25°C V CE = 50 V, Ta = 85°C
?μA
???V
Output saturation voltage
V CE (sat)
2
I OUT = 1.25 A, IIN = 2 mA I OUT = 0.75 A, IIN = 935 μA
I OUT = 1.0 A I OUT = 1.25 A
DC current transfer ratio Input voltage (output on) Clamp diode leakage current Clamp diode forward voltage Input capacitance Turn-ON delay Turn-OFF delay
h FE V IN (ON)
I R V F C IN t ON t OFF
CE = 2 V
?? ? ? ? ? ?
?
?
OUT = 1.25 A, IIN = 2 mA 4
V R = 50 V, Ta = 25°C V R = 50 V, Ta = 85°C
??μA
??F = 1.25 A
IN = 0 V, f = 1 MHz 7 7
C L = 15 pF, VOUT = 50 V, R L = 42 Ω
C L = 15 pF, VOUT = 50 V, R L = 42 Ω
???? ??
μs μs
Test Circuit
1. ICEX
2. VCE (sat), hFE
3. VIN (ON)
OUT
4. IR 5. VF
Open
6. CIN
Open
Open
7. tON , tOFF
Output
(Note 1) V OH
V OL V IH = 2.4 V
Note 1: Pulse Width 50 μs, Duty Cycle 10%
Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: C L includes probe and jig capacitance
I OUT – VCE (sat)
I IN – VIN
O
u t p u
t c u r r e n t I O U T
(A )
I n p u
t c u r r e n t I I N (m A
)
1.0
2.0 3.0 4.0 5.0
Collector-emitter saturation voltage
V CE (sat) (V)
Input voltage V IN (V)
I OUT – IIN
P D – Ta
O u
t p u t
c u r r e n t
I O U T (m A )
P o
w e r
d i s s i p a t i o
n P D (W )
50
100 150 200
40 160 80 120 200
Input current I IN (μA)
Ambient temperature Ta (°C)
I OUT – Duty cycle
I OUT – Duty cycle
O u
t p u t
c u r r e n t
I O U T (m A )
O u t p u t c u r r e n t I O U T (m A )
40 60 100 20 80
40 60 100 20 80
Duty Cycle (%) Duty Cycle (%)
I OUT – Duty cycle
I OUT – Duty cycle
O u
t p u t
c u r r e n t
I O U T (m A )
O u
t p u
t
c u
r r e
n
t
I O U
T
(m A
)
Duty Cycle (%) Duty Cycle (%)
Package Dimensions
Weight: 1.11 g (typ.)
Package Dimensions
Weight: 0.50 g (typ.)
Notes on Contents
1. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
2. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment.
IC Usage Considerations
Notes on Handling of ICs
(1)
The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion.
Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time.
Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator.
If there is a large amount of leakage current such as input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input
withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
(2)
(3)
(4)
(5)
Points to Remember on Handling of ICs
(1)
Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation
design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design.
(2)
About solderability, following conditions were confirmed ? Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature = 230°C · dipping time = 5 seconds · the number of times = once · use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C · dipping time = 5 seconds · the number of times = once · use of R-type flux
RESTRICTIONS ON PRODUCT USE
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. ? Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
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112011-01-14
范文三:达林顿
虚线 的三个二极管是 保护 用的,实的是控制管子工不工作,当 COMMON 为 低 电平时 OUTPUT 的电位被 箝位 为 0.7V 左右, 此时管子不工作。 当 COMMON 为高电平时,管子才可以工作。
虚线的三个是保护用的, 实线的那个 猜测 应该是起 隔离 作用的, 最好是要结 合整个图才能确定用途。
加速二极管的原理是引进了电流串联正反馈,达到加速的目的。 (有争议 ) 2.7K 电阻是为了防止输入电压高, 限流作用 , 7.2K 和 3K 电阻起 并联电 流负反馈作用 ,能使电流放大倍数稳定。
R1、 R2是泄放电阻,可以为漏电流提供泄放支路。 T1的发射结漏电流较 小,故 R1的阻值可适当大些。由于的漏电流经过放大后加至 T2的基极上,加 之 T2本身亦存在漏电流,使得 T2发射结上的漏电流较大,因此应降低 R2的
阻值,以满足 R1>>R2的关系。设计时通常取 R1为几千欧, R2为几十欧 , 二者相差两个数量级。
R2电阻实际应用在 100-330欧都可以,我是试用过的。
所谓的 漏电流 是行业术语,其实就是教科书上说的 反向饱和电流 Iceo 和 Iebo , Iceo 又叫穿透电流 。 Iceo 与温度成正比。管子通过电流,会逐渐开始发 热,电流关系式 IC=βIb+Iceo, Iceo=(1+β) Iebo ;可见,如果不采取措施,则 随着温度升高, ICEO 升高, IC 也迅速升高,使管子更加发热严重,进入恶性循 环,最终可能烧坏管子。加上 R1, R2后,会把漏电流通过电阻流到 E 级去 (因
为 rbe>>R1, R2) ,最后经外围电路流入大地。 ; 这样就 V1射级出来的漏电 流不会被继续放大,也就稳定了 Ic ,所以热稳定性得到提高。
达林顿管多用在大功率输出电路中,这时由于功率增大,管子本身压降会造成温度上 升,再加上前级三极管的 漏电流 ( ICEO) 也会被逐级放大,从而导致达林顿管整体 热稳定性 差。 为了改变这种状况, 在大功率达林顿管内部均设有 均衡电阻 , 这样不但可以大大提高管 子的热稳定性, 还能有效地提高末级功率三极管的耐压。 大部分大功率达林顿管在末级三极 管的集电极与发射极之间反向并联一只 阻尼二极管, 以防负载突然断电时三极 管被击穿 。加有均衡电阻及阻尼二极管的达林顿管典型电路如图 15-32 所示。
在 VT1和 VT2的发射结上分别并联了电阻 R1和电阻 R2, 其作用是 为漏电流提供泄 放支路 。当感性负载 (如继电器线圈 ) 突然断电时 , 通过 VD 可将反向尖峰电压池 放掉 , 防止内部晶体管击穿 。
达林顿管 IC , 一般都是 用来驱动功率稍微大一点的被动器件的, 而驱动的被动器件里, 有很大一部分是 感性 的,如继电器、马达、 电磁阀 等,这些 感性器件在关断瞬间 会产生很高的自感电动势(自感电压) ,低的 10多伏,高的几十伏,甚至几 百伏,这么高的电压很容易把达林顿管打坏,甚至打坏电路中的其它元器件,所以需要 在 感性器件上并联一个二极管, 用来续流 (就是把那个自感高压放掉) , 保护 IC 和其它器件不受破坏 ,此 续流二极管 正极接 2803输出端 (即电感器件的
一端),负极接驱动电源(也就是电感器件的另一端)。在内部设计了二极管以后,用户在 使用的时候不需要外接二极管,在同时驱动多路器件的时候可以节省 PCB 空间,节约成本、 方便走线。
作用:给前面的管子的穿透电流提供一个通路, 避免进入后一个管子的基极 被放大。 这个电阻的选用一般是考虑在前管的极限最大穿透电流下在其上的压降 小于后面管子的 VBE (比如说硅管的话这个电阻上的压降希望小于 0.4-0.5V )。 至于成品的达林顿管里到底多大那就需要看数据手册。
范文四:达林顿电路,达林顿管
达林顿电路,达林顿管
2008/11/3014:25
什么是达林顿电路
两只晶体管按如图 1的连接法叫做 达林顿电路
其放大系数是两只三极管的放大系数的乘积
什么是达林顿管
达林顿管 是将二只三极管适当的连接(如上图所示)在一起,以组成一只等效的新的三极管, 便是 达林顿管 ,这个过程又称之为 晶体管的复合 ,所以达林顿管又可称之为 复合管
复合成 NPN 达林顿的两种方法或复合成 PNP 达林顿管的两种方法,结果虽然都是一样,但 也有区别,如图:
达林顿管的作用
1、用于大功率开关电路、电机调速、逆变电路。
2、驱动小型继电器
利用 CMOS 电路经过达林顿管驱动高灵敏度继电器的电路。
3、驱动 LED 智能显示屏
智能显示屏是由微型计算机控制,以 LED 矩阵板作显示的系统,可用来显示各种文字及图案。 其 系统中的行驱动器和列驱动器均可采用高 β、高速低压降的达林顿管。
应注意的是,达林顿管由于内部由多只管子及电阻组成,用万用表测试时, be 结的正反向阻值与 普通三极管不同。对于高速达林顿管,有些管子的前级 be 结还反并联一只输入二极管,这时测 出 be 结正反向电阻阻值很接近;容易误判断为坏管,这个请注意。
相关文章:
范文五:达林顿管&达林顿电路
&
两只晶体管按如图1的连接法叫做
其放大系数是两只三极管的放大系数的乘积
是将二只三极管适当的连接(如上图所示)在一起,以组成一只等效的新的三极管,
便是,这个过程又称之为,所以达林顿管又可称之为
复合成NPN达林顿的两种方法或复合成PNP达林顿管的两种方法,结果虽然都是一样,但
也有区别,如图:
1、用于大功率开关电路、电机调速、逆变电路。
2、驱动小型继电器
利用CMOS电路经过达林顿管驱动高灵敏度继电器的电路。
3、驱动LED智能显示屏
智能显示屏是由微型计算机控制,以LED矩阵板作显示的系统,可用来显示各种文字及图案。
其系统中的行驱动器和列驱动器均可采用高β、高速低压降的达林顿管。 应注意的是,达林顿管由于内部由多只管子及电阻组成,用万用表测试时,be结的正反向阻值与普通三极管不同。对于高速达林顿管,有些管子的前级be结还反并联一只输入二极管,这时
测出be结正反向电阻阻值很接近;容易误判断为坏管,这个请注意。
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